2026-10-23 · arXiv Quantum Physics
arXiv:2610.30375v1 Announce Type: new
Abstract: Group IV color centers in diamond -- silicon, germanium, tin, and lead-vacancy centers -- are a promising platform for quantum networking. Typical Group-IV creation utilizes ion implantation during diamond growth that leaves the color centers with a broad depth distribution and damage-induced strain inhomogeneity. Deterministic placement and damage reduction in Group IV generation are essential for improving this platform. In this letter, we report on the localization of germanium-vacancy (GeV$^-$) to a $
原文链接：https://arxiv.org/abs/2610.30375
查看更多资讯请见 AI 行业资讯。